A MODEL FOR THE PERFORMANCE OF SILICON MICROSTRIP DETECTORS

被引:10
作者
SAILOR, WC
ZIOCK, HJ
KINNISON, WW
HOLZSCHEITER, K
机构
[1] Los Alamos National Laboratory, Los Alamos
关键词
D O I
10.1016/0168-9002(91)90795-R
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The performance of silicon microstrip detectors which will be used at the SSC is simulated using charge carrier transport and electrostatic equations. The output current pulse shape as a function of detector dimensions, applied voltage, magnetic field strength, and particle trajectory is calculated. A Monte Carlo calculation, which combines the pulse shape results with an energy loss distribution, indicates that when operating at a 99% detection efficiency, charge sharing between neighboring strips will occur more than 40% of the time for 50-mu-m pitch double-sided readout detectors in the environment of a 2 T magnetic field. Using only hit/no-hit information, a position resolution of about 28-mu-m FWHM is achievable in the strip-to-strip dimension. If the p-side strips are rotated by 5 mrad with respect to the n-side strips, a hit position resolution in the lengthwise dimension of about 7 mm FWHM is calculated.
引用
收藏
页码:285 / 297
页数:13
相关论文
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