INFLUENCE OF DIFFERENT GROWTH TECHNIQUES ON THE QUALITY OF GAINAS-INP QUANTUM WELL STRUCTURES GROWN BY ADDUCT-MOVPE

被引：13

作者：

STREUBEL, K ^{[1
]}

SCHOLZ, F ^{[1
]}

LAUBE, G ^{[1
]}

DIETER, RJ ^{[1
]}

ZIELINSKI, E ^{[1
]}

KEPPLER, F ^{[1
]}

机构：

[1] UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Photoluminescence - X-Rays--Diffraction;

D O I：

10.1016/0022-0248(88)90551-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper the influence of different growth interruption techniques on the interface quality of GaInAs-InP quantum well structures is studied. The structures were grown by atmospheric pressure MOVPE with adducts as Ga and In source materials. They were investigated by X-ray diffraction, photoluminescence and optical gain spectroscopy. Best results were achieved by a short interruption of the growth process at every interface if the uppermost InP surfaces were stabilized by PH3 during this time.

引用

页码：347 / 352

页数：6

共 7 条

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