INP, GAINAS AND QUANTUM-WELL STRUCTURES GROWN BY ADDUCT MOVPE

被引:21
作者
SCHOLZ, F [1 ]
WIEDEMANN, P [1 ]
NERZ, U [1 ]
BENZ, KW [1 ]
TRANKLE, G [1 ]
LACH, E [1 ]
FORCHEL, A [1 ]
LAUBE, G [1 ]
WEIDLEIN, J [1 ]
机构
[1] UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1016/0022-0248(86)90353-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:564 / 570
页数:7
相关论文
共 14 条
[1]  
AITCHISON K, 1983, THESIS U LONDON
[3]   CO-ORDINATION COMPLEXES OF METHYL DERIVATIVES OF INDIUM AND THALLIUM [J].
COATES, GE ;
WHITCOMBE, RA .
JOURNAL OF THE CHEMICAL SOCIETY, 1956, (SEP) :3351-3354
[4]   GAINAS/INP QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
KUO, CP ;
FRY, KL ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1985, 47 (08) :855-857
[5]   OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS [J].
MINAGAWA, S ;
NAKAMURA, H ;
SANO, H .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) :377-384
[6]   NEW APPROACH TO GROWTH OF ABRUPT HETEROJUNCTIONS BY MOVPE [J].
MOSS, RH ;
SPURDENS, PC .
ELECTRONICS LETTERS, 1984, 20 (23) :978-980
[7]   GROWTH OF GAXIN1-XAS AND GAXIN1-XASYP1-Y USING PREFORMED ADDUCTS [J].
MOSS, RH ;
SPURDENS, PC .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :96-101
[8]  
MOSS RH, 1985, I PHYS C SER, V74, P681
[9]   RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J].
RAZEGHI, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :145-149
[10]   INP EPITAXY WITH A NEW METALORGANIC COMPOUND [J].
RENZ, H ;
WEIDLEIN, J ;
BENZ, KW ;
PILKUHN, MH .
ELECTRONICS LETTERS, 1980, 16 (06) :228-228