CORRELATION BETWEEN ELECTRICAL-RESISTANCE AND MICROSTRUCTURE IN GOLD WIREBONDS ON ALUMINUM FILMS

被引：29

作者：

MAIOCCO, L ^{[1
]}

SMYERS, D ^{[1
]}

MUNROE, PR ^{[1
]}

BAKER, I ^{[1
]}

机构：

[1] DARTMOUTH COLL,THAYER SCH ENGN,HANOVER,NH 03755

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 03期

关键词：

D O I：

10.1109/33.58865

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gold ball bonds attached to either pure Al films or Al films with Cu and Si additions were annealed at temperatures in the range 77-277°C for periods of up to 3000 h. Electrical resistance of the bonds was measured to within +/-1 mΩ using a manual four probe arrangement with an applied current of up to 100 mA. Nonlinear multiple regression analysis of the data produced an empirical model for the resistance increase up to 8 mΩ. The resistance increases are related to the intermetallic phases and void configurations observed. © 1990 IEEE

引用

页码：592 / 595

页数：4

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