WEAK-LOCALIZATION IN A GAAS HETEROSTRUCTURE CLOSE TO POPULATION OF THE 2ND SUBBAND

被引：30

作者：

HANSEN, JE ^{[1
]}

TABORYSKI, R ^{[1
]}

LINDELOF, PE ^{[1
]}

机构：

[1] FERROPERM AS, DK-2950 VEDBAEK, DENMARK

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.47.16040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Weak-localization magnetoresistance has been measured as a function of carrier density using a back-gate technique. The phase relaxation rate and the spin-orbit relaxation rate have been determined. The dominating contribution to the phase relaxation rate comes from electron-electron interaction, as demonstrated for samples covering densities from 2.5 to 7.5 X 10(15) m-2. Interband scattering is found to enhance phase relaxation. A strictly two-dimensional electron gas (2DEG) quenches the spin-orbit relaxation rate in the plane of the 2DEG, 1/tau(so)x,y, whereas the orthogonal part, 1/tau(so)z, appears added to the phase relaxation rate in the interpretation of the weak-localization magnetoresistance, and can be determined as the saturation value of the phase relaxation at low temperatures. For high carrier densities, intersubband scattering makes the spin-orbit scattering more isotropic and our data support a theory by Elliott.

引用

页码：16040 / 16043

页数：4

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