LOW-PRESSURE GROWTH OF SINGLE-CRYSTAL SILICON-CARBIDE

被引：12

作者：

HARRIS, GL ^{[1
]}

JACKSON, KH ^{[1
]}

FELTON, GJ ^{[1
]}

OSBORNE, KR ^{[1
]}

FEKADE, K ^{[1
]}

SPENCER, MG ^{[1
]}

机构：

[1] HOWARD UNIV,DEPT ELECT ENGN,SOLID STATE ELECTR GRP,WASHINGTON,DC 20059

来源：

关键词：

D O I：

10.1016/0167-577X(86)90053-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 80

页数：4

共 8 条

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