EFFECT OF INTERFACES UPON ATOMIC DIFFUSION - SI AND ZN IN GAAS

[1] SHALLOW ZINC DIFFUSION IN LIQUID-PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 108 - 110

[2] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 185 - 187

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[4] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[7] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[8] DEPENDENCE OF ZN DIFFUSION ON AL CONTENT IN GA1-XALXAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (06) : 905 - &

[9] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 147 - 165

[10] SILICON IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 165 - 167

[1] SHALLOW ZINC DIFFUSION IN LIQUID-PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 108 - 110

[2] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 185 - 187

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[4] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[7] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[8] DEPENDENCE OF ZN DIFFUSION ON AL CONTENT IN GA1-XALXAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (06) : 905 - &

[9] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 147 - 165

[10] SILICON IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 165 - 167