MONTE-CARLO SIMULATION OF HOT-ELECTRONS IN SILICON P-I-N COLD CATHODES

被引：2

作者：

BOOTS, HMJ

SCHUURMANS, MFH

ARNOLD, D

HIGMAN, JM

HESS, K

机构：

[1] DELFT UNIV TECHNOL,DELFT,NETHERLANDS

[2] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期

关键词：

D O I：

10.1063/1.103871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monte Carlo simulation of electron transport in p-i-n cold cathodes yields an exponential dependence of the efficiency on the work function similar to the relation found in the experiment. The effective temperature characterizing the exponential dependence is higher in the model than in the experiment and is not equal to the calculated electron temperature. The efficiency at breakdown decreases with the intrinsic layer width and is very sensitive to the X-X intervalley scattering rates.

引用

页码：2446 / 2448

页数：3