DELAYED COLLECTION FIELD EXPERIMENT IN AMORPHOUS ARSENIC TRISELENIDE

Delayed collection field experiments, which are known to be a method for measuring lifetimes in amorphous semiconductors, are examined for amorphous arsenic triselenide. It is experimentally shown that the effective transit time is approximately equal to the delay time, when the delay time is long compared with the zero-delay transit time, and that the effective transit time is almost independent of collection electric field and temperature. These results are found to be consistent with the prediction by Kastner [Solid State Commun. 45, 191 (1983)], which is based upon the multiple trapping model. Influence of a structured, tail-state distribution on the experimental results has been also riumerically examined.