EVIDENCE FOR FIELD-ASSISTED THERMAL EMISSION OF HOLES FROM DEEP MOBILITY GAP STATES IN AMORPHOUS-SEMICONDUCTORS FROM XEROGRAPHIC DARK DISCHARGE MEASUREMENTS

被引：12

作者：

KASAP, SO ^{[1
]}

BAXENDALE, M ^{[1
]}

JUHASZ, C ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT ELECT ENGN,SOLID STATE RES GRP,LONDON SW7 2BT,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.339176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：171 / 173

页数：3

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