GAIN MECHANISM IN AN (ALGA)AS DOUBLE HETEROSTRUCTURE LASER

被引：5

作者：

DEFONZO, AP ^{[1
]}

机构：

[1] USN,RES LAB,DIV OPT SCI,OPT TECH BRANCH,WASHINGTON,DC 20375

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 10期

关键词：

D O I：

10.1109/JQE.1983.1071750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1537 / 1541

页数：5

相关论文

共 19 条

[1] POLARISATION OF RADIATION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS
ADAMS, MJ
CROSS, M
[J]. ELECTRONICS LETTERS, 1971, 7 (19) : 569 - &
[2] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
ITO, R
CHINONE, N
MAEDA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94
[3] ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V9, P305
[4] [Anonymous], 1977, SEMICONDUCTOR LASERS
[5] [Anonymous], 1978, HETEROSTRUCTURE LASE
[6] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[7] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[8] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[9] HENSHALL GD, 1977, APPL PHYS LETT, P305
[10] IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470