THERMAL-CONDUCTIVITY OF GERMANIUM DOPED WITH SILICON, TIN, AND ALUMINUM

被引：7

作者：

BAKHCHIEVA, SR ^{[1
]}

KEKELIDZE, NP ^{[1
]}

KEKUA, MG ^{[1
]}

机构：

[1] TBILISI STATE UNIV, TBILISI, GEORGIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1984年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssa.2210830114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 145

页数：7

共 17 条

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[9] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

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