HIGH-PRECISION MOS CURRENT MIRROR

被引：6

作者：

AKIYA, M

NAKASHIMA, S

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1049/ip-i-1.1984.0043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MOS

引用

页码：170 / 175

页数：6

共 13 条

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[8] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

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