AMORPHOUS-SILICON PHOTOTRANSISTOR ON A GLASS SUBSTRATE

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] CHANDRA A, 1979, ELECTRON LETT, V15, P91

[3] OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 149 - 150

[4] CHANG CY, UNPUB THEORY A SI BU

[5] THEORY OF A MODULATED BARRIER PHOTO-DIODE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 979 - 981

[6] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 340 - 342

[7] HAMAKAWA Y, 1982, AMORPHOUS SEMICONDUC, P123

[8] TRANSITION FROM THE BIPOLAR TO THE BULK-BARRIER TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1447 - 1454

[9] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837

[10] AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 266 - 274

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] CHANDRA A, 1979, ELECTRON LETT, V15, P91

[3] OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 149 - 150

[4] CHANG CY, UNPUB THEORY A SI BU

[5] THEORY OF A MODULATED BARRIER PHOTO-DIODE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 979 - 981

[6] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 340 - 342

[7] HAMAKAWA Y, 1982, AMORPHOUS SEMICONDUC, P123

[8] TRANSITION FROM THE BIPOLAR TO THE BULK-BARRIER TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1447 - 1454

[9] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837

[10] AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 266 - 274