PHOTOELECTRIC PROPERTIES OF CUPROUS-OXIDE

被引:113
作者
POLLACK, GP
TRIVICH, D
机构
[1] TEXAS INSTR INC, CENT RES LAB, DALLAS, TX 75222 USA
[2] WAYNE STATE UNIV, DEPT CHEM, DETROIT, MI 48202 USA
关键词
D O I
10.1063/1.321312
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:163 / 172
页数:10
相关论文
共 16 条
[1]  
Bloem J., 1958, PHILIPS RES REP, V13, P167
[2]  
BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P73
[3]   PREPARATION OF MONOCRYSTALLINE CUPROUS OXIDE [J].
EBISUZAKI, Y .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2027-&
[4]   TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].
HORNBECK, JA ;
HAYNES, JR .
PHYSICAL REVIEW, 1955, 97 (02) :311-321
[5]  
KUZEL R, 1970, J APPL PHYS, V41, P271, DOI 10.1063/1.1658333
[6]  
KUZEL R, 1961, DIRECT CURR, V6, P172
[7]  
Kuzel R., 1955, CZECH J PHYS, V5, P421
[8]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[9]   THERMODYNAMICS OF FORMATION AND MIGRATION OF DEFECTS IN CUPROUS OXIDE [J].
OKEEFFE, M ;
MOORE, WJ .
JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (11) :3009-&
[10]  
PASTRNAK J, 1956, CZECH J PHYS, V6, P217