1/F, G-R AND BURST NOISE INDUCED BY EMITTER-EDGE DISLOCATIONS IN BIPOLAR-TRANSISTORS

被引:18
作者
MIHAILA, M [1 ]
AMBERIADIS, K [1 ]
VANDERZIEL, A [1 ]
机构
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
关键词
ELECTRIC MEASUREMENTS;
D O I
10.1016/0038-1101(84)90138-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Noise measurements conducted on npn bipolar transistors have revealed that the emitter-edge dislocations give rise to both 1/f and g-r noise, the resulting noise increasing with the number of dislocations. In dislocated devices, an alpha of approx. 1. 8 multiplied by 10** minus **4 has been found which accounts for the base 1/f noise as mobility-fluctuation noise. A 1/f**2 burst noise spectrum was observed when dislocations are clustered.
引用
收藏
页码:675 / 676
页数:2
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