AN ELECTRON UNDULATING RING FOR VLSI LITHOGRAPHY

被引：6

作者：

TOMIMASU, T

NOGUCHI, T

SUGIYAMA, S

YAMAZAKI, T

MIKADO, T

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/TNS.1985.4334382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3403 / 3405

页数：3

共 5 条

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[2] LARGE AREA EXPOSURE IN SYNCHROTRON RADIATION LITHOGRAPHY UTILIZING THE STEERING OF THE ELECTRON-BEAM IN THE STORAGE RING [J].

TANINO, H ;

HOH, K ;

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ICHIMURA, S ;

ATODA, N ;

TOMIMASU, T ;

NOGUCHI, T ;

SUGIYAMA, S ;

YAMAZAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L677-L679

[3] A 600-MEV ETL ELECTRON STORAGE RING [J].

TOMIMASU, T ;

NOGUCHI, T ;

SUGIYAMA, S ;

YAMAZAKI, T ;

MIKADO, T ;

CHIWAKI, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (04) :3133-3135

[4]

TOMIMASU T, 1983, 2ND P CHIN JAP JOINT, P135

[5]

TOMIMASU T, 1984, 5TH P S ACC SCI TECH, P18

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