SILICON DIOXIDE THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION FROM TETRAKIS(DIETHYLAMINO)SILANE AND OZONE

被引：11

作者：

MARUYAMA, T

OHTANI, S

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dioxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method. The raw materials were tetrakis(diethylamino)silane and ozone in oxygen gas. The amorphous films were obtained at a substrate temperature above 200-degrees-C. The films were superior in chemical stability and hardness to the films which were prepared from tetraethoxysilane and ozone.

引用

页码：2800 / 2802

页数：3