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NONLINEARITIES IN SEMICONDUCTOR-LASER AMPLIFIERS

被引：32
作者：
ADAMS, MJ
DAVIES, DAO
TATHAM, MC
FISHER, MA
机构：
[1] BT Laboratories, Martlesham Heath, Ipswich
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1995年 / 27卷 / 01期
关键词：
D O I：
10.1007/BF00431029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This review discusses the physical mechanisms of absorptive and dispersive nonlinearity in amplifiers resulting from interband and intraband electron transitions, with an assessment of the relative strengths and response times of these nonlinearities. Where appropriate, the potential applications of these nonlinearities in optical networks are also indicated.
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页码：1 / 13
页数：13
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