DIRECT OBSERVATION OF DISLOCATION CORE STRUCTURES IN CDTE/GAAS(001)

被引：83

作者：

MCGIBBON, AJ

PENNYCOOK, SJ

ANGELO, JE

机构：

[1] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA

[2] SANDIA NATL LABS, LIVERMORE, CA 94550 USA

来源：

SCIENCE | 1995年 / 269卷 / 5223期

关键词：

D O I：

10.1126/science.269.5223.519

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.

引用

页码：519 / 521

页数：3

共 23 条

[1] EFFECTS OF SURFACE RECONSTRUCTION ON CDTE/GAAS(001) INTERFACE STRUCTURE [J].