MICROSCOPIC CAPACITORS AND NEUTRAL INTERFACES IN III-V/IV/III-V SEMICONDUCTOR HETEROSTRUCTURES

被引：49

作者：

BIASIOL, G

SORBA, L

BRATINA, G

NICOLINI, R

FRANCIOSI, A

PERESSI, M

BARONI, S

RESTA, R

BALDERESCHI, A

机构：

[1] UNIV TRIESTE,DIPARTIMENTO FIS TEOR,I-34014 TRIESTE,ITALY

[2] SCUOLA INT SUPER STUDI AVANZATI,I-34014 TRIESTE,ITALY

[3] INST ROMAND RECH NUMER PHYS MAT,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

[4] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.69.1283

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAsGe(001) heterojunctions. We found that well-defined inequivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1-2 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.

引用

页码：1283 / 1286

页数：4

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