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EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001)

被引：42
作者：
CHAMBERS, SA
IRWIN, TJ
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.38.7484
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7484 / 7492
页数：9
相关论文
共 42 条
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    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4098 - 4103
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    [J]. PHYSICAL REVIEW B, 1985, 31 (02): : 1212 - 1215
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    CHAMBERS, SA
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    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2592 - 2597
  • [7] HIGH-ENERGY AUGER AND MEDIUM-ENERGY BACKSCATTERED ELECTRON-DIFFRACTION AS A PROBE OF ULTRA-THIN EPITAXIAL OVERLAYERS, SANDWICHES AND SUPERLATTICES
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    WEAVER, JH
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (05) : 563 - 571
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    [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 8992 - 9002
  • [10] ATOMIC-STRUCTURE OF THE CU/SI(111) INTERFACE BY HIGH-ENERGY CORE-LEVEL AUGER-ELECTRON DIFFRACTION
    CHAMBERS, SA
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    [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 581 - 587
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