EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001)

被引：42

作者：

CHAMBERS, SA

IRWIN, TJ

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7484

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：7484 / 7492

页数：9

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