REALIZATION OF BOTH P-TYPE AND N-TYPE CONDUCTION FOR ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES

被引：16

作者：

KOBAYASHI, M

DOSHO, S

IMAI, A

KIMURA, R

KONAGAI, M

TAKAHASHI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1602 / 1604

页数：3

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[1] IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICES
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[2] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES
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[4] LATTICE STRAIN AND LATTICE-DYNAMICS OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES
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[5] PHOTOLUMINESCENCE STUDY OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES GROWN ON INP SUBSTRATES
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TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 773 - 778
[6] GROWTH OF A ZNSE-ZNTE STRAINED-LAYER SUPERLATTICE ON AN INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY
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[7] TWO-DIMENSIONAL METASTABLE MAGNETIC SEMICONDUCTOR STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1482 - 1484
[8] GROWTH OF HIGH-PURITY ZNTE SINGLE-CRYSTALS BY THE SUBLIMATION TRAVELING HEATER METHOD
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[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 204 - 213
[9] ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 153 - 158
[10] DYNAMIC REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATIONS OF THE ATOMIC LAYER EPITAXY GROWTH OF ZN CHALCOGENIDES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L942 - L944