TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINED INGAAS/GAAS HETEROSTRUCTURES

被引:11
作者
HOPNER, A
SEITZ, H
RECHENBERG, I
BUGGE, F
PROCOP, M
SCHEERSCHMIDT, K
QUEISSER, HJ
机构
[1] UNIV GOTTINGEN,INST PHYS 4,D-37073 GOTTINGEN,GERMANY
[2] HOCHSTFREQUENZTECH BERLIN,FERDINAND BRAUN INST,D-12489 BERLIN,GERMANY
[3] FORSCHUNGSVERBUND BERLIN EV,BERLIN,GERMANY
[4] BUNDESANSTALT MAT FORSCH & PRUFUNG,D-12205 BERLIN,GERMANY
[5] MAX PLANCK INST MIKROSTRUKT PHYS,D-06120 HALLE,GERMANY
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 150卷 / 01期
关键词
D O I
10.1002/pssa.2211500137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to optimize the growth conditions of strained-layer InGaAs QW high-performance lasers by MOVPE, different growth parameters are systematically varied. These test structures as well as complete laser structures are carefully analysed. Special attention is given among others to the homogeneity and interface quality of the quantum well. For ''thicker'' QW layers (>7 nm) - grown under standard conditions - it is possible to prove an increased smearing of the upper QW interface. This observation is in good correlation with AES measurements. For the first time, the inhomogeneous In distribution in the QW could be visualized as a detectable segregation of In in the interface region by using high-resolution TEM techniques and new methods of image analysis.
引用
收藏
页码:427 / 437
页数:11
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