ON THE INTERNAL STRUCTURE OF CU-SAPPHIRE AND PT-SAPPHIRE INTERFACES

被引:50
作者
MULDER, CAM
KLOMP, JT
机构
来源
JOURNAL DE PHYSIQUE | 1985年 / 46卷 / NC-4期
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D O I
10.1051/jphyscol:1985412
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页码:111 / 116
页数:6
相关论文
共 15 条
[1]   DIRECT OBSERVATION OF A SILICON-SAPPHIRE HETEROEPITAXIAL INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].
ABRAHAMS, MS ;
HUTCHISON, JL ;
BOOKER, GR .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (01) :K3-&
[2]   EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
SMITH, RT ;
CORBOY, JF ;
BLANC, J ;
CULLEN, GW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5139-5150
[3]  
[Anonymous], ADV MAT RES
[4]   DIRECT OBSERVATION OF STRUCTURE OF THIN, COMMERCIALLY USEFUL SILICON ON SAPPHIRE FILMS BY CROSS-SECTION TRANSMISSION ELECTRON-MICROSCOPY [J].
HAM, WE ;
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
BLANC, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :634-636
[5]  
Hockey B. J., 1972, Proceedings of the British Ceramic Society, P95
[6]  
HORNSTRA J, COMMUNICATION
[7]  
KLOMP JT, 1970, SCI CERAM, V5, P501
[8]  
KLOMP JT, 1983, UNPUB P BRIT CER SOC
[9]  
KLOMP JT, 1981, MATERIALS SCI RES, V14, P97
[10]  
LANGEREIS C, COMMUNICATION