SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS

被引：4

作者：

BOGAERTS, R

DEKEYSER, A

HERLACH, F

PEETERS, FM

DEROSA, F

PALMSTROM, CJ

BREHMER, D

ALLEN, SJ

机构：

[1] UNIV INSTELLING ANTWERPEN,DEPT NATUURKUNDE,B-2610 ANTWERP,BELGIUM

[2] BELLCORE,RED BANK,NJ 07701

[3] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90299-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Size effects have been studied in the transport properties of Sc1-xErxAs layers with thicknesses ranging from 20 to 0.8 nm. Shubnikov-de Haas (SdH) measurements in titled magnetic fields confirm the confinement of charge carriers in the Sc1-xErxAs quantum wells. For the layers with thickness less than 5.7 nm, the magnetoresistance is increasingly negative for decreasing thickness. Different size mechanisms which may be responsible for the observed behaviour are discussed.

引用

页码：789 / 792

页数：4

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