LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS

被引：67

作者：

PALMSTROM, CJ

MOUNIER, S

FINSTAD, TG

MICELI, PF

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful growth of lattice-matched Sc1-xErxAs layers buried in GaAs with a room-temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice-matched rare-earth monopnictides and monochalcogenides in semiconductors. Reflection high-energy electron diffraction oscillations during ScAs, ErAs, and Sc1-xErxAs growth indicate monolayer-by-monolayer growth.

引用

页码：382 / 384

页数：3

共 25 条

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