MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001)

[1] An X-ray analysis of the nickel-aluminium system [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1937, 159 (A896) : 0056 - 0072

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[4] EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001) [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7484 - 7492

[5] CHAMBERS SA, 1989, IN PRESS PHYS REV B, V39

[6] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[7] FADLEY CS, 1984, PROGR SURFACE SCI, V16, P327

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (18) : 1717 - 1719

[10] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[1] An X-ray analysis of the nickel-aluminium system [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1937, 159 (A896) : 0056 - 0072

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[4] EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001) [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7484 - 7492

[5] CHAMBERS SA, 1989, IN PRESS PHYS REV B, V39

[6] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[7] FADLEY CS, 1984, PROGR SURFACE SCI, V16, P327

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (18) : 1717 - 1719

[10] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &