MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES

被引：82

作者：

HARBISON, JP

SANDS, T

TABATABAIE, N

CHAN, WK

FLOREZ, LT

KERAMIDAS, VG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期

关键词：

D O I：

10.1063/1.99804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1717 / 1719

页数：3

共 12 条

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[9] EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES [J].

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