EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES

被引：58

作者：

SANDS, T

HARBISON, JP

CHAN, WK

SCHWARZ, SA

CHANG, CC

PALMSTROM, CJ

KERAMIDAS, VG

机构：

来源：

关键词：

D O I：

10.1063/1.99162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1216 / 1218

页数：3

共 11 条

[1] GUIVARCH A, 1987, ELECTRON LETT, V23, P1005
[2] Lahav A., 1985, MATER RES STAND, V37, P641
[3] ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS
OGAWA, M
[J]. THIN SOLID FILMS, 1980, 70 (01) : 181 - 189
[4] CO/GAAS INTERFACIAL REACTIONS
PALMSTROM, CJ
CHANG, CC
YU, A
GALVIN, GJ
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3755 - 3762
[5] STABILITY AND EPITAXY OF NIAL AND RELATED INTERMETALLIC FILMS ON III-V-COMPOUND SEMICONDUCTORS
SANDS, T
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 197 - 199
[6] A COMPARATIVE-STUDY OF PHASE-STABILITY AND FILM MORPHOLOGY IN THIN-FILM CO/GAAS,RH/GAAS,IR/GAAS,NI/GAAS,PD/GAAS, AND PT/GAAS SYSTEMS
SANDS, T
KERAMIDAS, VG
YU, KM
WASHBURN, J
KRISHNAN, K
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2070 - 2079
[7] Sands T., 1987, Journal of Materials Research, V2, P262, DOI 10.1557/JMR.1987.0262
[8] STRUCTURE AND COMPOSITION OF NIXGAAS
SANDS, T
KERAMIDAS, VG
WASHBURN, J
GRONSKY, R
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 402 - 404
[9] SANDS T, 1988, APPL PHYS LETT, V52
[10] SANDS T, 1987, 45TH P ANN M EL MICR, P322