STRUCTURE AND COMPOSITION OF NIXGAAS

被引：82

作者：

SANDS, T

KERAMIDAS, VG

WASHBURN, J

GRONSKY, R

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期

关键词：

CRYSTALS - Structure - MICROSCOPIC EXAMINATION - Transmission Electron Microscopy - SEMICONDUCTOR DEVICES;

D O I：

10.1063/1.96511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Advanced compound semiconductor devices require increasingly stable, shallow, and uniform metallized layers for ohmic and Schottky contacts. However, the design of new multielemental contact metallization systems is limited by the paucity of information regarding the structure, composition, and stability of phases resulting from the interaction of single metal layers with compound semiconductors. In this letter, the results of a transmission electron microscopy investigation of the Ni/GaAs reaction are presented. The first reaction product is shown to have the composition Ni//3GaAs. Based on this composition and lattice parameter measurements, it is proposed that the structure of Ni// 3GaAs is closely related to that of gamma (prime)Ni//3Ga//2, a derivative of the hexagonal B8 structure type.

引用

页码：402 / 404

页数：3

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