ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS

[1] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[2] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[3] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412

[4] OGAWA M, 1971, I PHYS C SER, V9, P268

[5] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[6] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[7] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (DEC1) : 425 - 437

[8] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPUTTER ETCHING AND ANNEALING AMBIENT [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1998 - 2003

[9] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668

[1] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[2] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[3] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412

[4] OGAWA M, 1971, I PHYS C SER, V9, P268

[5] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[6] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[7] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (DEC1) : 425 - 437

[8] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPUTTER ETCHING AND ANNEALING AMBIENT [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1998 - 2003

[9] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668