STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPUTTER ETCHING AND ANNEALING AMBIENT

被引：11

作者：

SEVERI, M ^{[1
]}

GABILLI, E ^{[1
]}

GUERRI, S ^{[1
]}

CELOTTI, G ^{[1
]}

机构：

[1] CNR, LAMEL LAB, I-40126 BOLOGNA, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.323908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1998 / 2003

页数：6

共 24 条

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[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
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[4] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984
[5] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES
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EVANS, CA
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1732 - 1736
[6] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
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MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
[7] CHRIST JG, 1969, IEEE SPECTRUM, V6, P109, DOI 10.1109/MSPEC.1969.5214011
[8] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
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[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3843 - &
[9] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
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SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[10] INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS
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SUN, RC
TISONE, TC
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01): : 243 - +

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