TERNARY PHASES IN THE PD-GAAS SYSTEM - IMPLICATIONS FOR SHALLOW CONTACTS TO GAAS

被引：28

作者：

SANDS, T

KERAMIDAS, VG

GRONSKY, R

WASHBURN, J

机构：

[1] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 9-10期

关键词：

D O I：

10.1016/0167-577X(85)90089-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：409 / 413

页数：5

共 7 条

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[5] CONTACT REACTIONS IN PD-GAAS JUNCTIONS [J].

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[6]

SANDS T, 1985, THIN SOLID FILMS

[7] STRUCTURAL CHARACTERIZATION OF THE INTERFACIAL REACTIONS BETWEEN PALLADIUM AND GALLIUM-ARSENIDE [J].

ZENG, XF ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :611-614

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