INTERFACIAL REACTIONS OF NI-TA THIN-FILMS ON GAAS

被引：24

作者：

LAHAV, A ^{[1
]}

EIZENBERG, M ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：256 / 258

页数：3

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共 14 条

[1] EIZENBERG M, 1983, J APPL PHYS, V53, P1577
[2] INTERFACIAL REACTION AND SCHOTTKY-BARRIER BETWEEN PT AND GAAS
FONTAINE, C
OKUMURA, T
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1404 - 1412
[3] LAHAV A, THESIS TECHNION ISRA
[4] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS
MAYER, JW
LAU, SS
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859
[5] MURARKA SP, 1983, SILICIDES VLSI APPLI
[6] ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS
OGAWA, M
[J]. THIN SOLID FILMS, 1980, 70 (01) : 181 - 189
[7] CONTACT REACTIONS IN PD-GAAS JUNCTIONS
OLOWOLAFE, JO
HO, PS
HOVEL, HJ
LEWIS, JE
WOODALL, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 955 - 962
[8] CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS
OLOWOLAFE, JO
TU, KN
ANGILELLO, J
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6316 - 6320
[9] OTTAVIANI G, 1980, APPL PHYS LETT, V36, P1331
[10] INTERACTION OF EVAPORATED PALLADIUM THIN-FILMS WITH GALLIUM-ARSENIDE
OUSTRY, A
CAUMONT, M
ESCAUT, A
MARTINEZ, A
TOPRASERTPONG, B
[J]. THIN SOLID FILMS, 1981, 79 (03) : 251 - 256