MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001)

被引：21

作者：

CHAMBERS, SA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：737 / 741

页数：5

共 31 条

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