Growth and properties of epitaxial ferroelectric/superconductor heterostructures

被引：1

作者：

Boikov, Y

Ivanov, ZG

Kiselev, AN

Vasiliev, AL

Olsson, E

Claeson, T

机构：

[1] Department of Physics, Chalmers University of Technology, Göteborg University

[2] A.F. Ioffe Physico-Technical Institute

[3] Institute of Crystallography, Russian Academy of Sciences

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00130-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial trilayer heterostructures of YBa2Cu3O7-delta/BaXSr1-XTiO3/YBa2Cu3O7-delta, with x=0.25-0.90, were grown on silicon-on-sapphire buffered with CeO2 and Y-ZrO2. The top and bottom YBa2Cu3O7-delta films were c-axis oriented, micro-crack free and had superconducting transitions T-c's in the range 86-90K. A thin antidiffusion layer of SrTiO3 (d approximate to 70 Angstrom) between YBa2Cu3O7-delta and BaXSr1-XTiO3 improved the quality of the top superconducting film. The maximum values of the permittivity of the BaXSr1-XTiO3 layers were observed around the Curie temperatures of corresponding bulk monocrystals. The dielectric permittivity of the BaXSr1-XTiO3 (x=0.25-0.75) layers depended strongly (approximate to 20%) on an applied voltage (+/-2.5 V) at temperatures around 77 K. The dielectric loss of the thin films was much higher than for corresponding bulk crystals.

引用

页码：129 / 132

页数：4

共 8 条

[1] MICROWAVE MEASUREMENT OF THE DIELECTRIC-CONSTANT OF SR0.5BA0.5TIO3 FERROELECTRIC THIN-FILMS [J].