POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE

被引：9

作者：

MARTINEZ, E

YNDURAIN, F

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6511

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6511 / 6513

页数：3

共 6 条

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JOANNOPOULOS, JD
CHADI, DJ
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[3] ELECTRON-STATES AT PLANAR AND STEPPED SEMICONDUCTOR SURFACES
LOUIS, E
YNDURAIN, F
[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1542 - 1551
[4] THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF SIOX
MARTINEZ, E
YNDURAIN, F
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5718 - 5725
[5] REALISTIC MODEL FOR THE ELECTRONIC-STRUCTURE OF AMORPHOUS SIOX ALLOY
MARTINEZ, E
YNDURAIN, F
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (12) : 979 - 982
[6] PANTELIDES ST, 1978, PHYSICS SIO2 ITS INT