ELECTRON-STATES AT PLANAR AND STEPPED SEMICONDUCTOR SURFACES

被引：31

作者：

LOUIS, E

YNDURAIN, F

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV AUTONOMA MADRID,CSIC,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.16.1542

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1542 / 1551

页数：10

共 24 条

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[3] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
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[7] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &
[8] ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS
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[9] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
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[10] INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS
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