X-RAY-DIFFRACTION STUDY OF THE GE(111)5X5-SN AND GE(111)7X7-SN SURFACES

被引:14
作者
PEDERSEN, JS [1 ]
FEIDENHANSL, R [1 ]
NIELSEN, M [1 ]
GREY, F [1 ]
JOHNSON, RL [1 ]
机构
[1] MAX PLANCK INST SOLID STATE RES,D-7000 STUTTGART 80,FED REP GER
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 18期
关键词
D O I
10.1103/PhysRevB.38.13210
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:13210 / 13221
页数:12
相关论文
共 35 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[3]   MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE - REPLY [J].
BOHR, J ;
FEIDENHANSL, R ;
NIELSEN, M ;
TONEY, M ;
JOHNSON, RL ;
ROBINSON, IK .
PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2878-2878
[4]  
BREWER L, 1975, LBL3720 REP
[5]   THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON [J].
CHOU, MY ;
COHEN, ML ;
LOUIE, SG .
PHYSICAL REVIEW B, 1985, 32 (12) :7979-7987
[6]  
FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116
[7]  
FEIDENHANSL R, IN PRESS PHYS REV B
[8]  
GROSSMANN HJ, 1985, PHYS REV LETT, V55, P1106
[9]   GE(111) 7 X 7 SURFACE-STRUCTURE INDUCED BY SN [J].
ICHIKAWA, T ;
INO, S .
SOLID STATE COMMUNICATIONS, 1978, 27 (04) :483-486
[10]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&