INFLUENCE OF AN A-SINX-H GATE INSULATOR ON AN AMORPHOUS-SILICON THIN-FILM TRANSISTOR

被引：30

作者：

HIRANAKA, K

YOSHIMURA, T

YAMAGUCHI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2129 / 2135

页数：7

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