UNDOPED AMORPHOUS SINX-H ALLOY SEMICONDUCTORS - DEPENDENCE OF ELECTRONIC-PROPERTIES ON COMPOSITION

被引：22

作者：

HERAK, TV

MCLEOD, RD

KAO, KC

CARD, HC

WATANABE, H

KATOH, K

YASUI, M

SHIBATA, Y

机构：

[1] TOHOKU UNIV,DEPT ELECTR ENGN,SENDAI,MIYAGI 980,JAPAN

[2] SENDAI RADIO TECH COLL,MIYAGI 98931,JAPAN

[3] STANLEY ELECT CO LTD,RES & DEV LAB,YOKOHAMA 227,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 69卷 / 01期

关键词：

D O I：

10.1016/0022-3093(84)90121-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：39 / 48

页数：10

共 21 条

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[5] MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 391 - 396
[6] DISPERSION OF OPTICAL-CONSTANTS OF AMORPHOUS SI1-XGEX(H) FILMS BEYOND THEIR ABSORPTION EDGES
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (09) : 1801 - 1811
[7] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
[8] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
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[J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &
[9] NAGELS P, 1979, AMORPHOUS SEMICONDUC, P123
[10] ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L485 - L487

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