ROUGHNESS ANALYSIS OF SI/SIGE HETEROSTRUCTURES

被引:61
作者
FEENSTRA, RM
LUTZ, MA
STERN, F
ISMAIL, K
MOONEY, PM
LEGOUES, FK
STANIS, C
CHU, JO
MEYERSON, BS
机构
[1] T. J. Watson Research Cent, Yorktown Heights
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期
关键词
D O I
10.1116/1.587865
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: mu m-scale roughness arising from misfit dislocations formed to relieve strain, 1000-Angstrom-scale roughness believed to be associated with three-dimensional growth of the electron or hole channel layers, and atomic-scale roughness with wavelengths of 10-100 Angstrom. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility-limiting mechanisms, including scattering from ionized impurities and from dislocations. (C) 1995 American Vacuum Society.
引用
收藏
页码:1608 / 1612
页数:5
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