SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODEL

[11] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[12] DEVICE DOWN SCALING AND EXPECTED CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 421 - 429

[13] HONEISEN B, 1972, SOLID STATE ELECTRON, V15, P819

[14] KOOI E, 1973, SEMICONDUCTOR SILICO, P860

[15] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417

[16] LEFFERTS RB, 1981, IMPACT INTERACTIVE M

[17] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[18] MEINDL JD, 1981, FEB INT SOL STAT CIR, P72

[19] RATNAKUMAR K, 1980, FEB INT SOL STAT CIR, P72

[20] RATNAKUMAR KN, UNPUB ACCURATE MEASU

[11] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[12] DEVICE DOWN SCALING AND EXPECTED CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 421 - 429

[13] HONEISEN B, 1972, SOLID STATE ELECTRON, V15, P819

[14] KOOI E, 1973, SEMICONDUCTOR SILICO, P860

[15] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417

[16] LEFFERTS RB, 1981, IMPACT INTERACTIVE M

[17] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[18] MEINDL JD, 1981, FEB INT SOL STAT CIR, P72

[19] RATNAKUMAR K, 1980, FEB INT SOL STAT CIR, P72

[20] RATNAKUMAR KN, UNPUB ACCURATE MEASU