POINT-DEFECTS IN SILICON STUDIED BY NICKEL DIFFUSION

被引：21

作者：

KITAGAWA, H ^{[1
]}

HASHIMOTO, K ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90268-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：323 / 327

页数：5

共 17 条

[1] Damask A.C., 1963, POINT DEFECTS METALS
[2] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283
[3] Friedel J., 1964, DISLOCATIONS
[4] DIFFUSION OF GOLD IN SILICON - A NEW MODEL
GOSELE, U
MOREHEAD, F
FRANK, W
SEEGER, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 157 - 159
[5] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON
GOSELE, U
FRANK, W
SEEGER, A
[J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
[6] GOSELE U, 1981, SEMICONDUCTOR SILICO
[7] HETTICH G, 1979, I PHYS C SER, V46, P500
[8] DIFFUSION OF GOLD IN THIN SILICON SLICES
HUNTLEY, FA
WILLOUGHBY, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1231 - +
[9] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON
KITAGAWA, H
HASHIMOTO, K
YOSHIDA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02): : 276 - 280
[10] NUMERICAL-SOLUTIONS OF BASIC EQUATIONS FOR KICK-OUT MECHANISM OF DIFFUSION
KITAGAWA, H
HASHIMOTO, K
YOSHIDA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 446 - 450