FINE-STRUCTURE OF THE LVM-LINES FROM (CAS-ASI) COMPLEXES IN IRRADIATED GAAS

被引：17

作者：

GLEDHILL, GA

UPADHYAY, SB

SANGSTER, MJL

NEWMAN, RC

机构：

[1] UNIV LONDON,IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR,LONDON SW7 2BZ,ENGLAND

[2] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1991年 / 247卷

关键词：

D O I：

10.1016/0022-2860(91)87081-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High resolution IR measurements on electron irradiated carbon doped GaAs crystals reveal two correlated LVM absorption lines at 606 and 577 cm-1 showing doublet and quadruplet fine structures respectively. The observed structures have been simulated by adjusting the local bond stretching force constant of a Keating model for an isolated carbon atom, displaced towards one Ga neighbour by a trapped arsenic interstitial to give a centre with C3v symmetry.

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页码：313 / 319

页数：7

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