THE SELECTIVE TRAPPING OF ARSENIC INTERSTITIAL ATOMS BY IMPURITIES IN GALLIUM-ARSENIDE

被引：19

作者：

COLLINS, JD ^{[1
]}

GLEDHILL, GA ^{[1
]}

MURRAY, R ^{[1
]}

NANDHRA, PS ^{[1
]}

NEWMAN, RC ^{[1
]}

机构：

[1] UNIV LONDON ROYAL HOLLOWAY COLL,DEPT PHYS,EGHAM TW20 0EX,SURREY,ENGLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 151卷 / 02期

关键词：

D O I：

10.1002/pssb.2221510207

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：469 / 477

页数：9

共 12 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[2] LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE [J].

BROZEL, MR ;

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (15) :3135-3146

[3] Isotopic fine structure of the local mode absorption from [Si-Ga-Ge-As] pairs in gallium arsenide [J].

Gledhill, GA ;

Newman, RC ;

Sellors, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (05) :298-301

[4] AN APPROXIMATE TREATMENT OF LOCALIZED VIBRATIONAL-MODES [J].

LEIGH, RS ;

NEWMAN, RC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (02) :84-89

[5]

LEIGH RS, 1982, J PHYS C SOLID STATE, V15, pL1045

[6] DEFECT CENTERS INVOLVING BORON IMPURITIES IN IRRADIATED AND ANNEALED HIGH-RESISTIVITY GALLIUM-ARSENIDE [J].

MAGUIRE, J ;

NEWMAN, RC ;

GRANT, I ;

RUMSBY, D ;

WARE, RM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (10) :2029-2040

[7] THE SELECTIVE TRAPPING OF MOBILE GROUP-V INTERSTITIALS BY IMPURITIES IN ELECTRON-IRRADIATED GAAS AND GAP [J].

NEWMAN, RC ;

WOODHEAD, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (08) :1405-1419

[8] BORON AND CARBON IMPURITIES IN GALLIUM-ARSENIDE [J].

NEWMAN, RC ;

THOMPSON, F ;

HYLIANDS, M ;

PEART, RF .

SOLID STATE COMMUNICATIONS, 1972, 10 (06) :505-&

[9] AN INFRARED STUDY OF THE ANNEALING OF ELECTRON-IRRADIATED GALLIUM-ARSENIDE [J].

OZBAY, B ;

NEWMAN, RC ;

WOODHEAD, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03) :581-589

[10] ANISOTROPIC-DEFECT INTRODUCTION IN GAAS BY ELECTRON-IRRADIATION [J].

PONS, D ;

BOURGOIN, J .

PHYSICAL REVIEW LETTERS, 1981, 47 (18) :1293-1296

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