DEFECT CENTERS INVOLVING BORON IMPURITIES IN IRRADIATED AND ANNEALED HIGH-RESISTIVITY GALLIUM-ARSENIDE

被引：11

作者：

MAGUIRE, J ^{[1
]}

NEWMAN, RC ^{[1
]}

GRANT, I ^{[1
]}

RUMSBY, D ^{[1
]}

WARE, RM ^{[1
]}

机构：

[1] CAMBRIDGE INSTRUMENTS LTD,MET RES,CAMBRIDGE CB1 3QH,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1985年 / 18卷 / 10期

关键词：

D O I：

10.1088/0022-3727/18/10/014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：2029 / 2040

页数：12

共 24 条

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[8]

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[9] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

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[10] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON [J].

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