STUDIES OF THE COMPENSATION MECHANISM IN CDTE GROWN FROM THE VAPOR-PHASE

被引：28

作者：

FIEDERLE, M ^{[1
]}

EBLING, D ^{[1
]}

EICHE, C ^{[1
]}

HUG, P ^{[1
]}

JOERGER, W ^{[1
]}

LAASCH, M ^{[1
]}

SCHWARZ, R ^{[1
]}

SALK, M ^{[1
]}

BENZ, KW ^{[1
]}

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,D-79104 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00473-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Semi-insulating titanium and vanadium doped cadmium telluride crystals were grown from the vapour phase. We show results of the electrical characterisation obtained by Hall measurements, photoinduced current transient spectroscopy (PICTS), admittance spectroscopy and time-of-flight measurements. The crystals with a resistivity of about 10(9) Omega.cm showed a deep level, which was identified for CdTe:V at - 0.77 eV and a similar value at - 0.66 eV for CdTe:Ti, both with reference to the conduction band. The mu tau products are almost the same for both materials in the range of 10(-5) cm(2)/V. A compensation model, which was developed for semi-insulating GaAs, is adapted to semi-insulating vanadium- and titanium-doped cadmium telluride. We show that the data from the compensation model correspond to the measured properties.

引用

页码：142 / 147

页数：6

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